Nanotechnology

Combine silicon and 2D materials to achieve new semiconductor technology with high energy efficiency

Graphical summary. Credit: ACS Nano (2025). Doi: 10.1021/acsnano.4c15271

Nanoelectronics handles very small electronic components that fit the tip of the needle, that is, transistors, sensors, and circuits. This technology supplies power to our daily lives through devices such as computers, smartphones, and medical tools.

In order to improve the efficiency and power of these devices, scientists are looking for an alternative material for standard silicon -based semiconductors.

A study led by Buffalo University in the Journal ACS Nano investigates how this goal can be achieved by mixing two -dimensional materials and silicon. This article proposes a better way to inject and transport charge. This is an advancement that indicates the great potential for 2D materials in future semiconductor technology.

“In our research, we will investigate how emerging 2D materials can be integrated with existing silicon technology, enhancing functions, improving performance, and opening up the path to high -energy nano -alectoronics. I’m doing it, “said Dr. Huamin Lee, the leader of the research and associate professor of the Faculty. Electrical engineer.

“More complex devices, such as 3 terminal transistors, can benefit from our discovery and achieve enhanced functions and performance.”

Dr. Faye Yao, an assistant professor at the Faculty of Material Design and Innovation, is the co -author of this study.

“As a scientist, we want to make components smaller so that we can do more work in less space,” she said. “This allows you to develop more powerful and compact and advanced technology.”

Lee and Yao jointly studied with Dr. Vasiri Pelebenos, a professor at the Department of Electrical Engineering. All three are members of the UB tip semiconductor technology center. This center is an interdisciplinary research center that develops cutting -edge microelectronics solutions while nurturing the next -generation leaders in the semiconductor industry.

Many other research co -authors are experts in 2D materials, physics, and nano -aloctronics, and are conducting research in China, South Korea, Austria and Italy.

“The partnership highlights the UB leadership in cutting -edge semiconductor research and the UB’s ability to promote an influential international and interdisciplinary partnership,” said Yao.

In this study, the research team uses a thin 2D material such as a semiconductor molybdenum (MOS2) in combination with silicon to provide high -efficiency electronic devices with excellent control and transportation methods. Demonstrated that it can be created. Despite the thickness of MOS2 less than 1 nanometer, if there is a 2D material between metal and silicon, the flow of the current charge may change.

“The 2D material mainly affects how charge injections and charges enter the material, but it does not actually affect how charge collection and charge come out of the material.” He says.

“This occurs regardless of the specific characteristics of 2D materials, so it is the semiconductor MOS2, half-metal graphene, or the insulator H-BN (six-six crystal boron). Can play a different role in charge injection, but all of the 2D materials in this special state are almost zero or zero charges. It works like.

Li said that the integration of 2D materials and silicon is a promising path for next -generation electronics, especially in the understanding of charge transportation and engineering, especially in the 2D material encountering 3D materials.

“Our study provides important insights in the 2D/3D interface and the charge transport mechanism, especially when the 2D material is scaled down,” he said. “As time goes on, this research will inspire the development of new 2D materials and devices, and eventually lead to more efficient and powerful electronic devices for everyday use.”

Detailed information: Anthony Cabanillas et al, Enormous Out-of-Plane Charge Rectification and Conductance Though Two-dimensional Monolayers, ACS NANO (2025). Doi: 10.1021/acsnano.4c15271

Provided by Buffalo University

Quotation: New energy efficient semiconductor technology mixture of semiconductor technology (January 23, 2025) https://phys.org/news/2025-01-silicon-2d-Materials- Energy-efffiction. Acquired from HTML on January 23, 2025

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